NLCSTR provides Gain Databases (Tables) for standard III-V
and II-VI material systems.
The material properties within these databases allow for a complete
closed loop design of a laser, starting with the nominal structural design
(layer-widths, -compositions and dopant concentrations) and predicting
the operating characteristics from lasing wavelength to input-output characteristics within the error
of the experiment.
Our quantitative calculations predict essential material characteristics
for a wide variety of optoelectronic devices including semiconductor
lasers, amplifiers or modulators. The analysis is rather general
requiring very few restrictions to the material systems or structural
layouts. Using state of the art microscopic many-body calculations
we calculate:
• gain, absorption, and refractive index spectra,
• spontaneous emission (photo luminescence) spectra,
• loss currents due to radiative recombination,
• loss currents due to Auger processes,
• intraband (free carrier) absorption,
as well as related related quantities such as differential gain or linewidth enhancement factors.
Our approach includes microscopic calculations of dephasing times
and lineshape functions, thus avoiding phenomenological inputs
needed in less sophisticated approaches.
In
a variety of comparisons with experimental
measurements the results of our calculations have been shown
to be accurate to within the experimental error. All significant
features, such as gain amplitudes, line shapes, spectral
positions or recombination currents and their dependencies on the carrier
density/pump current or temperature are reproduced correctly, demonstrating the predictive
capabilities of our simulations.
These results could be used
• as correct input for simulators calculating device performance
and characteristics like the RSoft
design tools from Synopsys Inc., or
Crosslight Software Inc.'s
Lastip,
• to help speed up and reduce expenses occuring in the development
of new devices (see e.g. the example description),
• for precise device analysis as explained for the examples of an edge-emitting device and a VECSEL
in the example description.
For more details about Gain Databases go here.